PART |
Description |
Maker |
SMBTA06UPN SMBTA06UPN07 |
NPN / PNP Silicon AF Transistor Array High breakdown voltage
|
Infineon Technologies AG
|
BC846PN |
High Speed CMOS Logic 10-to-4 Line Priority Encoder 16-PDIP -55 to 125 NPN/PNP Silicon AF Transistor Array
|
INFINEON[Infineon Technologies AG]
|
BC846UPN |
NPN/PNP Silicon AF Transistor Array(NPN/PNP硅放大器型晶体管阵列)
|
SIEMENS AG
|
CHT06UPNPT |
NPN/PNP Silicon AF Transistor Array
|
Chenmko Enterprise Co. Ltd.
|
BC846UPN |
NPN/PNP Silicon AF Transistor Array
|
INFINEON[Infineon Technologies AG]
|
SEMD12 |
NPN/PNP Silicon Digital Transistor Array Preliminary data
|
Infineon Technologies A... INFINEON[Infineon Technologies AG]
|
SEMD13 |
NPN/PNP Silicon Digital Transistor Array Preliminary data
|
Infineon Technologies A... INFINEON[Infineon Technologies AG]
|
FXT3866SM FXT449SM FXT549SM FXT749SM FXT649SM FXT6 |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 1A I(C) | SOT-89 TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 1A I(C) | SOT-89 TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 2A I(C) | SO TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 2A I(C) | SO TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 500MA I(C) | SO TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 1A I(C) | SO 晶体管|晶体管| npn型| 150伏五(巴西)总裁| 1A条一(c)| TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 2A I(C) | SO 晶体管|晶体管|进步党| 100V的五(巴西)总裁|甲一(c)| TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1A I(C) | SOT-89 晶体管|晶体管|进步党| 60V的五(巴西)总裁| 1A条一(c)|采用SOT - 89 TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 1A I(C) | SO 晶体管|晶体管|叩| 45V的五(巴西)总裁| 1A条一(c)| TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 400MA I(C) | SO 晶体管|晶体管|叩| 30V的五(巴西)总裁| 400mA的一(c)| TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | SOT-89
|
Zetex Semiconductor PLC Fujitsu, Ltd. Bourns, Inc. Amphenol, Corp.
|
SMBT3904PN |
General Purpose Transistors - NPN/PNP Silicon Switching Transistor Array
|
INFINEON[Infineon Technologies AG]
|
BCR22PN |
NPN/PNP Silicon Digital Transistor Array(NPN/PNP硅数字晶体管阵列) npn进步党硅数字晶体管阵列(npn进步党硅数字晶体管阵列)
|
SIEMENS AG
|